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PUSB3AB2DF 数据表(PDF) 1 Page - Nexperia B.V. All rights reserved |
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PUSB3AB2DF 数据表(HTML) 1 Page - Nexperia B.V. All rights reserved |
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1 / 11 page ![]() PUSB3AB2DF Extremely low clamping low capacitance ESD protection 22 November 2019 Product data sheet 1. General description Symmetrical bidirectional ElectroStatic Discharge (ESD) protection diode array, part of the TrEOS protection family. This device is housed in a DFN0603-3 (SOT8013) leadless ultra small Surface- Mounted Device (SMD) package designed to protect two signal lines from the damage caused by ESD and other transients. 2. Features and benefits • Bidirectional ESD protection of two lines • Very low diode capacitance Cd = 0.26 pF • Extremely low clamping to protect sensitive I/Os • Extremely low-inductance protection path to ground • ESD protection up to ±20 kV according to IEC 61000-4-2 • Ultra small SMD package 3. Applications • Cellular handsets and accessories • Portable electronics • Communication systems • Computers and peripherals 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage -4 - 4 V Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 0.26 - pF |
类似零件编号 - PUSB3AB2DF |
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类似说明 - PUSB3AB2DF |
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