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MBR340G.. 数据表(PDF) 1 Page - ON Semiconductor

部件名 MBR340G..
功能描述  Axial Lead Rectifier
PDF  4 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MBR340G.. 数据表(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 7
1
Publication Order Number:
MBR340/D
MBR340
Preferred Device
Axial Lead Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
Extremely Low VF
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
Pb−Free Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
Average Rectified Forward Current TA = 65°C
(RqJA = 28°C/W, P.C. Board Mounting)
IO
3.0
A
Non−Repetitive Peak Surge Current (Note 1)
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz, TL = 75°C)
IFSM
80
A
Operating and Storage Junction Temperature
Range (Reverse Voltage Applied) (Note 2)
TJ, Tstg
−65 to
+175
°C
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
(see Note 5, Mounting Method 3)
RqJA
28
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Lead Temperature reference is cathode lead 1/32 in from case.
2. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES, 40 VOLTS
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
MBR340
Axial Lead
500 Units / Bag
MBR340RL
Axial Lead
1500/Tape & Reel
MARKING DIAGRAM
A
MBR
340
YYWW
G
G
MBR340RLG
Axial Lead
(Pb−Free)
1500/Tape & Reel
MBR340G
Axial Lead
(Pb−Free)
500 Units / Bag
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
A
= Assembly Location
YY
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)


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