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MBR340G.. 数据表(PDF) 2 Page - ON Semiconductor |
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MBR340G.. 数据表(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() MBR340 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 3) Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 4) (iF = 1.0 Amp) (iF = 3.0 Amp) (iF = 9.4 Amp) vF 0.500 0.600 0.850 V Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 4) TL = 25°C TL = 100°C iR 0.60 20 mA 3. Lead Temperature reference is cathode lead 1/32in from case. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. TA, AMBIENT TEMPERATURE (C°) 20 100 60 40 80 4.0 2.0 8.0 6.0 0 10 dc SQUARE WAVE 120 140 160 180 200 VR REVERSE VOLTAGE (VOLTS) 020 10 30 40 40 0.001 100 0.002 0.004 0.01 0.04 0.02 0.1 0.4 0.2 20 10 4.0 2.0 1.0 25°C 75°C 100°C 10 10 100 1000 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.2 0.1 0.3 0.4 0.5 5.0 0.01 0.03 0.02 0.07 0.2 0.1 20 10 3.0 2.0 1.0 0.7 0.6 0.8 0.9 0.3 0.05 0.5 0.7 150°C 7.0 25°C 100°C TJ = 150°C *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selec- tions can be estimated from these same curves if VR is sufficiently below rated VR. Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current* Figure 3. Current Derating (Mounting Method #3 per Note 5) |
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