MPQ5850

– 36V, SMART DIODE CONTROLLER W/ REVERSE PROTECTION, AEC-Q100

MPQ5850 Rev. 1.1

MonolithicPower.com

4

2/9/2022

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PIN FUNCTIONS

Pin #

Name

Description

1

EN/UVLO

Enable pin. Pull EN below the specified threshold (1V) to shut down the chip. Pull EN above

the threshold (1.2V) to enable the chip. A resistor divider connected between EN/UVLO and

SOURCE can be used to raise the under-voltage lockout (UVLO) threshold. Do not float

the EN/UVLO pin, and connect it to DRAIN if the shutdown feature not used.

2

PG

Open-drain power good pin. The PG pin asserts low if the device is disabled, the reservoir

supply is out of regulation, or if the fast pull-up path is active for longer than 17

μs. Float PG

or connect it to GND if it is not used.

3

GND

Ground connection of the device. Connect GND to the ground plane of the board.

4

SW

Switch node of internal boost regulator. Connect an inductor between the SW and

DRAIN pins.

5

RES

Reservoir supply. RES is the power supply for the external N-channel MOSFET gate

driver. Connect a minimum 1μF ceramic capacitor between the RES and DRAIN pins.

6

DRAIN

Drain connection. Connect the DRAIN pin to the drain of the external power MOSFET.

DRAIN is the power supply of the internal circuitry, and also controls the MOSFET

’s gate

voltage. Connect a minimum

4.7μF capacitor from DRAIN to ground, and place this

capacitor as close as possible to the device.

7

GATE

Gate connection. Connect the GATE pin to the gate of the external power MOSFET.

8

SOURCE

Source connection. Connect the SOURCE pin to the source of the external power

MOSFET. The voltage sensed on this pin works with the DRAIN voltage to control the

MOSFET gate.

ABSOLUTE MAXIMUM RATINGS (1)

SOURCE, EN/UVLO..................... -36V to +42V

DRAIN ......................................... -0.3V to +42V

DRAIN - SOURCE .......................... -2V to +52V

GATE - SOURCE ........................ -0.3V to +13V

RES .................................. -0.3V to VDRAIN + 13V

SW............................................... -0.3V to +57V

PG ................................................. -0.3V to +6V

Continuous power dissipation (TA = 25°C) (2)

TSOT23-8 (2mmx3mm) .............................1.5W

Junction temperature ............................... 150°C

Lead temperature .................................... 260°C

Electrostatic Discharge (ESD) Ratings

Human body model (HBM) ................ Class 2 (3)

Charged device model (CDM) .......Class C2b (4)

Recommended Operating Conditions

Supply voltage (VIN) ........................ 3.3V to 36V

Operating junction temp (TJ) .... -40°C to +150°C

Thermal Resistance

θJA

θJC

TSOT23-8 (2mmx3mm)

JESD51-7 (5) ........................... 85 ...... 20... °C/W

Notes:

1) Exceeding these ratings may damage the device.

2) The maximum allowable power dissipation is a function of the

maximum junction temperature, TJ (MAX), the junction-to-

ambient thermal resistance,

θ

JA, and the ambient temperature,

TA. The maximum allowable continuous power dissipation at

any ambient temperature is calculated by PD (MAX) = (TJ

(MAX) - TA)/ θJA. Exceeding the maximum allowable power

dissipation can produce an excessive die temperature, and the

device may go into thermal shutdown. Internal thermal

shutdown circuitry protects the device from permanent

damage.

3) Per AEC-Q100-002.

4) Per AEC-Q100-011.

5) Measured on JESD51-7, 4-layer PCB. The values given in this

table are only valid for comparison with other packages and

cannot be used for design purposes. These values were

calculated in accordance with JESD51-7, and simulated on a

specified

JEDEC

board.

They

do

not

represent

the

performance obtained in an actual application.