MPQ5850

– 36V, SMART DIODE CONTROLLER W/ REVERSE PROTECTION, AEC-Q100

MPQ5850 Rev. 1.1

MonolithicPower.com

5

2/9/2022

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© 2022 MPS. All Rights Reserved.

ELECTRICAL CHARACTERISTICS

VSOURCE = VEN/UVLO = 12V, VRES = 22V, TJ = -40°C to +150°C, unless otherwise noted.

Parameter

Symbol

Condition

Min

Typ

Max

Units

Input Voltage

Drain voltage at start-up

VDRAIN_UVLO

2.8

3.2

V

Drain voltage UVLO

falling

VDRAIN_UVLO_F

2.4

2.6

2.8

V

Reservoir UVLO rising

VRES_UVLO

8

11

13

V

Reservoir UVLO

hysteresis

VRES_UVLO_HYS

0.2

V

Quiescent current

ISHDN

VEN = 0V, TJ = 25°C

4

10

μA

VEN = 0V, TJ = -40°C to +150°C

20

μA

IQ

VEN = 2V, in regulation, system

input current, TJ = 25°C

30

50

μA

VEN = 2V, in regulation, system

input current,

TJ = -40°C to +125°C (6)

100

μA

VEN = 2V, in regulation, system

input current,

TJ = 125°C to 150°C

200

μA

Rectifier

Source to drain

regulation voltage

VSD

10

20

30

mV

Source to drain fast pull-

up threshold

VSD_FPU

50

75

100

mV

Source to drain fast pull-

down threshold

VSD_FPD

-15

-4

0

mV

Drain current

ID

Gate driver in regulation

50

μA

Source current

IS_R

VSOURCE = -36V

-1

mA

Fast pull up current

IFPU

VGATE-RES = -7V

170

mA

Fast pull down current

IFPD

VGATE-SOURCE = 5V

430

mA

Reverse biased gate-

source voltage

VGS_RB

VSOURCE = -5V, IGATE = 1mA

0.01

0.3

V

VSOURCE = -36V, IGATE = 1mA

0.01

0.3

V

Gate turn-on delay time

tON

Step (VSOURCE - VDRAIN) from

-100mV to +3V, VRES-DRAIN = 13V,

CGATE-SOURCE = 10nF

1.2

2

μs

Gate turn-off delay time

tOFF

Step (VSOURCE - VDRAIN) from 3V to

-100mV, VRES-DRAIN = 13V,

CGATE-SOURCE = 10nF

1

2

μs

Gate rising time

tRISING (6)

Step (VSOURCE - VDRAIN) from

-100mV to +3V, VRES-DRAIN = 13V,

CGATE-SOURCE = 10nF

300

ns

Gate falling time

tFALLING (6)

Step (VSOURCE - VDRAIN) from 3V to

-100mV, VRES-DRAIN = 13V, CGATE-

SOURCE

= 10nF

100

ns

Maximum rectification

frequency (6)

fMAX

VPP = 6V, CGATE-SOURCE = 15nF

50

kHz

VPP = 2V, CGATE-SOURCE = 15nF

100