AM15540v4

D(5, 6, 7, 8)

G(4)

S(1, 2, 3)

Features

Order code

VDS

RDS(on) max.

ID

STLD110N10F7

100 V

6 mΩ

107 A

•

Among the lowest RDS(on) on the market

•

Excellent FoM (figure of merit)

•

Low Crss/Ciss ratio for EMI immunity

•

High avalanche ruggedness

Applications

•

Switching applications

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an

enhanced trench gate structure that results in very low on-state resistance, while also

reducing internal capacitance and gate charge for faster and more efficient switching.

Product status link

STLD110N10F7

Product summary

Order code

STLD110N10F7

Marking

110

Package

PowerFLAT™ 5x6 dual

side cooling

Packing

Tape and reel

N-channel 100 V, 5 mΩ typ., 107 A STripFET™ F7 Power MOSFET in a

PowerFLAT™ 5x6 dual side cooling package

STLD110N10F7

Datasheet

DS11930 - Rev 4 - February 2019

For further information contact your local STMicroelectronics sales office.

www.st.com