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STLD110N10F7 数据表(PDF) 2 Page - STMicroelectronics |
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STLD110N10F7 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 13 page ![]() 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ±20 V ID (1) Drain current (continuous) at TC = 25 °C 107 A Drain current (continuous) at TC = 100 °C 80 A IDM (2) (1) Drain current (pulsed) 428 A PTOT (1) Total power dissipation at TC = 25 °C 150 W ID (3) (2) Drain current (continuous) at Tpcb = 25 °C 21 A Drain current (continuous) at Tpcb = 100 °C 14 A IDM (2) (3) Drain current (pulsed) 84 A PTOT (3) Total power dissipation at Tpcb = 25 °C 4.8 W TJ Operating junction temperature range - 55 to 175 °C Tstg Storage temperature range 1. This value is rated according to Rthj-case bottom side. 2. Pulse width limited by safe operating area 3. This value is rated according to Rthj-pcb Table 2. Thermal data Symbol Parameter Value Unit Rthj-c top side Thermal resistance junction-case top side 2.8 °C/W Rthj-c bottom side Thermal resistance junction-case bottom side 1 Rthj-pcb (1) Thermal resistance junction-pcb 31.3 1. When mounted on 1 inch² 2 Oz. Cu board, t ≤ 10 s STLD110N10F7 Electrical ratings DS11930 - Rev 4 page 2/13 |
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