2

Electrical characteristics

(TC= 25 °C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 250 μA

100

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 100 V

1

µA

VGS = 0 V, VDS = 100 V,

Tj = 125 °C (1)

10

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = 20 V

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 μA

2.5

4.5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 10 A

5

6

mΩ

1. Defined by design, not subject to production test.

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 50 V, f = 1 MHz, VGS = 0 V

-

5117

-

pF

Coss

Output capacitance

-

992

-

pF

Crss

Reverse transfer capacitance

-

39

-

pF

Qg

Total gate charge

VDD = 50 V, ID = 21 A,

VGS = 0 to 10 V (see Figure 13. Test

circuit for gate charge behavior)

-

72

-

nC

Qgs

Gate-source charge

-

30

-

nC

Qgd

Gate-drain charge

-

17

-

nC

Table 5. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 50 V, ID = 10 A, RG = 4.7 Ω,

VGS = 10 V (see Figure 12. Test

circuit for resistive load switching

times and Figure 17. Switching time

waveform)

-

25

-

ns

tr

Rise time

-

36

-

ns

td(off)

Turn-off delay time

-

52

-

ns

tf

Fall time

-

21

-

ns

STLD110N10F7

Electrical characteristics

DS11930 - Rev 4

page 3/13