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1N60L-TN3-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 1N60L-TN3-R
功能描述  1.2 Amps, 600 Volts N-CHANNEL MOSFET
PDF  8 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

1N60L-TN3-R 数据表(HTML) 3 Page - Unisonic Technologies

  1N60L-TN3-R Datasheet HTML 1Page - Unisonic Technologies 1N60L-TN3-R Datasheet HTML 2Page - Unisonic Technologies 1N60L-TN3-R Datasheet HTML 3Page - Unisonic Technologies 1N60L-TN3-R Datasheet HTML 4Page - Unisonic Technologies 1N60L-TN3-R Datasheet HTML 5Page - Unisonic Technologies 1N60L-TN3-R Datasheet HTML 6Page - Unisonic Technologies 1N60L-TN3-R Datasheet HTML 7Page - Unisonic Technologies 1N60L-TN3-R Datasheet HTML 8Page - Unisonic Technologies  
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1N60
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 8
www.unisonic.com.tw
QW-R502-052,D
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Switching Characteristics
Turn-On Delay Time
tD (ON)
5
20
ns
Rise Time
tR
25
60
ns
Turn-Off Delay Time
tD (OFF)
7
25
ns
Fall Time
tF
VDD=300V, ID=1.2A, RG=50Ω
(Note 1,2)
25
60
ns
Total Gate Charge
QG
5.0
6.0
nC
Gate-Source Charge
QGS
1.0
nC
Gate-Drain Charge
QGD
VDS=480V, VGS=10V, ID=1.2A
(Note 1,2)
2.6
nC
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
VSD
VGS=0V, ISD = 1.2A,
1.4
V
Continuous Drain-Source Current
ISD
1.2
A
Pulsed Drain-Source Current
ISM
4.8
A
Reverse Recovery Time
tRR
160
ns
Reverse Recovery Charge
QRR
VGS=0V, ISD = 1.2A
di/dt = 100A/µs (Note1)
0.3
µC
Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%
2. Essentially Independent of Operating Temperature



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