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1N60L-TN3-R 数据表(PDF) 6 Page - Unisonic Technologies

部件名 1N60L-TN3-R
功能描述  1.2 Amps, 600 Volts N-CHANNEL MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

1N60L-TN3-R 数据表(HTML) 6 Page - Unisonic Technologies

  1N60L-TN3-R Datasheet HTML 1Page - Unisonic Technologies 1N60L-TN3-R Datasheet HTML 2Page - Unisonic Technologies 1N60L-TN3-R Datasheet HTML 3Page - Unisonic Technologies 1N60L-TN3-R Datasheet HTML 4Page - Unisonic Technologies 1N60L-TN3-R Datasheet HTML 5Page - Unisonic Technologies 1N60L-TN3-R Datasheet HTML 6Page - Unisonic Technologies 1N60L-TN3-R Datasheet HTML 7Page - Unisonic Technologies 1N60L-TN3-R Datasheet HTML 8Page - Unisonic Technologies  
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1N60
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
6 of 8
www.unisonic.com.tw
QW-R502-052,D
TYPICAL PERFORMANCE CHARACTERISTICS
10
0
10-1
10
1
10
-1
10
0
Drain-Source Voltage, VDS (V)
Output Characteristics
250μs Pulse Test
TC=25℃
10-2
V GS
Top: 15.0V
10 .0V
8 .0V
7 .0V
6 .5V
6 .0V
Bottorm :5.5V
10
0
10
-1
2
Gate-Source Voltage, VGS (V)
Transfer Characteristics
46
8
10
-40℃
125℃
25℃
VDS=50V
250μs Pulse Test
0
0.0
Drain Current, ID (A)
0.5
1.0
2.5
VGS=10V
TJ=25℃
VGS=20V
1.5
2.0
5
10
15
25
30
On-Resistance vs. Drain Current
20
10
0
10
-1
0.2
Source-Drain Voltage, VSD (V)
Source- Drain Diode Forward Voltage
1.6
25℃
0.4
0.6
0.8
1.0
1.2
1.4
125℃
VGS=0V
250μs Pulse Test
200
0
10-1
VDS, Drain-SourceVoltage (V)
Capacitance vs. Drain-Source Voltage
150
50
100
10
0
10
1
VGS=0V
f = 1MHz
Ciss=CGS+CGD
(CDS=shorted)
Coss=CDS+CGD
Crss=CGD
Crss
Ciss
Coss
0
Total Gate Charge, QG (nC)
1
2
5
ID=1.2A
3
4
8
10
12
Gate Charge vs. Gate-Source Voltage
6
4
2
0
VDS=120V
VDS=300V
VDS=480V



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