UNISONIC TECHNOLOGIES CO., LTD

1N60

Power MOSFET

www.unisonic.com.tw

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Copyright © 2005 Unisonic Technologies Co., Ltd

QW-R502-052,D

1.2 Amps, 600 Volts

N-CHANNEL MOSFET

DESCRIPTION

The UTC 1N60 is a high voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and have a high rugged avalanche

characteristics. This power MOSFET is usually used at high speed

switching applications in power supplies, PWM motor controls, high

efficient DC to DC converters and bridge circuits.

FEATURES

* Ultra Low gate charge (typical 5.0nC)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

1.Gate

3.Source

2.Drain

TO-220

1

TO-252

TO- 251

1

1

1

TO-220F

*Pb-free plating product number: 1N60L

ORDERING INFORMATION

Order Number

Pin Assignment

Normal

Lead Free Plating

Package

1

2

3

Packing

1N60-TA3-T

1N60L-TA3-T

TO-220

G

D

S

Tube

1N60-TF3-T

1N60L-TF3-T

TO-220F

G

D

S

Tube

1N60-TM3-T

1N60L-TM3-T

TO-251

G

D

S

Tube

1N60-TN3-R

1N60L-TN3-R

TO-252

G

D

S

Tape Reel

1N60-TN3-T

1N60L-TN3-T

TO-252

G

D

S

Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

1N60L-TA3-T

(1)Packing Type

(2)Package Type

(3)Lead Plating

(1) T: Tube, R: Tape Reel

(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,

TN 3: TO-252

(3) L: Lead Free Plating, Blank: Pb/Sn