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DAP002 数据表(PDF) 11 Page - STMicroelectronics |
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DAP002 数据表(HTML) 11 Page - STMicroelectronics |
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11 / 23 page ![]() Since the system tries restarting each hiccup cy- cle, there is not any latchoff risk. "Hiccup" keeps the system in control in case of short circuits but does not eliminate power com- ponents overstress during pulse-by-pulse limita- tion (from A to C). Other external protection cir- cuits are needed if a better control of overloads is required. Pin 8. VCC (Controller Supply). This pin supplies the signal part of the IC. The device is enabled as VCC voltage exceeds the start threshold and works as long as the voltage is above the UVLO threshold. Otherwise the device is shut down and the current consumption is extremely low (<150 µA). This is particularly useful for reducing the consumption of the start-up circuit (in the sim- plest case, just one resistor), which is one of the most significant contributions to power losses in standby. An internal Zener limits the voltage on VCC to 25V. The IC current consumption increases con- siderably if this limit is exceeded. A small film capacitor between this pin and SGND (pin 12), placed as close as possible to the IC, is recommended to filter high frequency noise. Pin 9. VC (Supply of the Power Stage). It supplies the driver of the external switch and therefore ab- sorbs a pulsed current. Thus it is recommended to place a buffer capacitor (towards PGND, pin 11, as close as possible to the IC) able to sustain these current pulses and in order to avoid them inducing disturbances. This pin can be connected to the buffer capacitor directly or through a resistor, as shown in fig. 27, to control separately the turn-on and turn-off speed of the external switch, typically a Power- MOS. At turn-on the gate resistance is Rg + Rg’, at turn-off is Rg only. Pin 10. OUT (Driver Output). This pin is the out- put of the driver stage of the external power switch. Usually, this will be a PowerMOS, al- though the driver is powerful enough to drive BJT’s (1.6A source, 2A sink, peak). The driver is made up of a totem pole with a high- side NPN Darlington and a low-side VDMOS, thus there is no need of an external diode clamp to prevent voltage from going below ground. An in- ternal clamp limits the voltage delivered to the gate at 13V. Thus it is possible to supply the driver (Pin 9) with higher voltages without any risk of damage for the gate oxide of the external MOS. The clamp does not cause any additional in- crease of power dissipation inside the chip since the current peak of the gate charge occurs when the gate voltage is few volts and the clamp is not active. Besides, no current flows when the gate voltage is 13V, steady state. Under UVLO conditions an internal circuit (shown 7V Thic time SHORT IOUT ISEN FAULT SS 5V 0.5V D98IN986 Figure 26. Hiccup mode operation. OUT Rg DRIVE & CONTROL 13V VC VCC Rg' PGND Rg(ON)=Rg+Rg' Rg(OFF)=Rg D97IN726 L5991 9 10 11 8 Figure 27. Turn-on and turn-off speeds adjust- ment. L5991 - L5991A 11/23 |
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