CGY2105ATS datasheet(4/16 Pages) PHILIPS

4 / 16 page

1999 Dec 23

Philips Semiconductors

Preliminary speciﬁcation

High dynamic range dual LNA MMIC

CGY2105ATS

CHARACTERISTICS

Tamb =25 °C; measured and guaranteed only for the application shown in Chapter “Application and test information”;

unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Supplies

Isupply

positive supply current (for each LNA)

Vsupply = 5.0 V;

Vneg = −5.0 V

Ineg

negative supply current (for each LNA)

Vsupply = 5.0 V;

Vneg = −5.0 V

−

0.3

0.4

Ampliﬁers: Vsupply = 5.0 V; Vneg = −5.0 V; Z0 =50 Ω; both LNAs biased; duty cycle 100%

input frequency

1710

−

1910

MHz

gain

fi = 1710 MHz

16.9

17.8

fi = 1710 to 1910 MHz

14.8

16.3

17.8

∆G

(T)

gain variation with temperature

−40 °C<Tamb < +85 °C

−±0.45

−

noise ﬁgure

−

0.55

0.8

∆NF(T)

noise ﬁgure variation with temperature

−40 °C<Tamb < +85 °C

−±0.25

−

IP3i

input third-order intercept point

∆f= ±0.5 MHz

13.5

−

dBm

∆IP3i(T)

input third-order intercept point

variation with temperature

−40 °C<Tamb < +85 °C

−±0.45

−

ISOr

reverse isolation

−

ISOi

isolation between inputs

−

s11

input reﬂection coefﬁcient

Ω source

−−8.5

−

s22

output reﬂection coefﬁcient

Ω load

−−22

−

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