CGY2105ATS datasheet(3/16 Pages) PHILIPS

3 / 16 page

1999 Dec 23

Philips Semiconductors

Preliminary speciﬁcation

High dynamic range dual LNA MMIC

CGY2105ATS

PINNING

SYMBOL

DESCRIPTION

VS2

1, 2, 14 and 15

ampliﬁer 2 source

IN2

ampliﬁer 2 input

n.c.

not connected

n.c.

not connected

IN1

ampliﬁer 1 input

VS1

7, 8, 10 and 11

ampliﬁer 1 source

OUT1

ampliﬁer 1 drain output

VG1

ampliﬁer 1 gate bias

VG2

ampliﬁer 2 gate bias

OUT2

ampliﬁer 2 drain output

handbook, halfpage

CGY2105ATS

FCA097

VS2

IN2

n.c.

IN1

VS1

OUT2

VS2

VG2

VG1

VS1

OUT1

Fig.2 Pin configuration.

LIMITING VALUES

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS

drain-source voltage

−−

VGS

gate-source voltage

−3

−

VDG

drain-gate voltage

−−

Vsupply

positive supply voltage

see Chapter “Application and test

information”

−−

Vneg

negative supply voltage

see Chapter “Application and test

information”

−6

−−

Tamb

ambient temperature

−40

−

+85

°C

junction temperature

−−

150

°C

Tstg

storage temperature

−−

150

°C

Ptot

total power dissipation

Tamb <85 °C

−−

430

SYMBOL

PARAMETER

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

138

K/W

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