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ISCF8008 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 ISCF8008
功能描述  SiC N-Channel MOSFET
PDF  7 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISCF8008 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCF8008 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8008 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8008 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISCF8008 Datasheet HTML 4Page - Inchange Semiconductor Company Limited ISCF8008 Datasheet HTML 5Page - Inchange Semiconductor Company Limited ISCF8008 Datasheet HTML 6Page - Inchange Semiconductor Company Limited ISCF8008 Datasheet HTML 7Page - Inchange Semiconductor Company Limited  
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ISCF8008
eq C3M0065100K
SiC N-Channel MOSFET
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.1
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 0.1mA
1000
--
--
V
VGS(th)
Gate Threshold Voltage
VDS = 10V; ID = 5mA
1.8
2.1
3.5
V
VGS(th)
Gate Threshold Voltage
VDS = 10V; ID = 5mA;TJ=150℃
--
1.6
--
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 15V; ID=20A
--
65
78
mΩ
RDS(ON)
Drain-Source On-stage Resistance
VGS= 15V; ID=20A;TJ=150℃
--
90
--
mΩ
IGSS
Gate Source Leakage Current
VGS= 15V; VDS= 0V
--
10
250
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 1000V; VGS = 0V
--
1
100
μA
RG
Internal Gate Resistance
f = 1 MHz, VAC = 25 mV
--
4.7
--
Ω
gfS
Transconductance
VDS = 20V; ID=20A
--
14.3
--
S
gfS
Transconductance
VDS = 20V; ID=20A;TJ=150℃
--
11.9
--
S
Ciss
Input Capacitance
VGS = 0V,
VDS = 1000V,
f = 1.0MHz
VAC=25mV
--
1355
--
pF
Coss
Output Capacitance
--
70
--
Crss
Reverse Transfer Capacitance
--
10.5
--
Qg
Total Gate Charge
VDD=800V,
ID= 36A,
VGS= - 4to +15V
--
89
--
nC
Qgs
Gate-Source Charge
--
3.8
--
Qgd
Gate-Drain Charge
--
38
--



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