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ISCF8008 数据表(PDF) 3 Page - Inchange Semiconductor Company Limited

部件名 ISCF8008
功能描述  SiC N-Channel MOSFET
PDF  7 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISCF8008 数据表(HTML) 3 Page - Inchange Semiconductor Company Limited

  ISCF8008 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8008 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8008 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISCF8008 Datasheet HTML 4Page - Inchange Semiconductor Company Limited ISCF8008 Datasheet HTML 5Page - Inchange Semiconductor Company Limited ISCF8008 Datasheet HTML 6Page - Inchange Semiconductor Company Limited ISCF8008 Datasheet HTML 7Page - Inchange Semiconductor Company Limited  
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ISCF8008
eq C3M0065100K
SiC N-Channel MOSFET
www.iscsemi.com
3
td(on)
Turn-on Delay Time
VGS= - 4to +15V
ID= 36A,
VDS=800V,
Rg=25Ω,
inductive load
--
38
--
ns
tr
Turn-on Rise Time
--
86
--
td(off)
Turn-off Delay Time
--
80
--
tf
Turn-off Fall Time
--
100
--
SOURCE-DRAIN BODY DIODE CHARACTERISTICS
Drain - Source Body Diode Characteristics
VSD
Diode Forward Voltage
ISD= 10A; VGS= -4V
--
4.8
--
V
VSD
Diode Forward Voltage
ISD= 10A; VGS= -4V;TJ=150℃
--
4.4
--
V
IS
Diode pulse Current
VGS= -4V
--
--
90
A
trr
Reverse Recovery Time
VGS = -4 V, ISD = 20 A,
VR = 700V
dif/dt=4500 A/µs
TJ=150℃
--
14
--
ns
Qrr
Reverse Recovery Charge
--
310
--
uC
Irrm
Peak Reverse Recovery Current
--
34
--
A



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