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ISCF8008 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF8008 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 7 page  ISCF8008 eq C3M0065100K SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · High Blocking Voltage with Low On-Resistance · RDS(ON)=78mΩ（TYP.）@VGS=15V Tj=25℃ · High Speed Switching with Low Capacitance · Easy to Parallel and Simple to Drive APPLICATIONS · Solar Inverters · Switch Mode Power Supplies · DC-DC Converters · Motor drives Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGSS Gate-Source Opetation Voltage -8/+19 V ID Drain Current-Continuous 35 A Drain Current-Continuous@Tc=100℃ 22.5 A IDM Drain Current-Single Pluse 90 A PD Total Dissipation @TC=25℃ 113.5 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
类似零件编号 - ISCF8008 |
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类似说明 - ISCF8008 |
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