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ADRF5700BCCZN-R7 数据表(PDF) 4 Page - Analog Devices |
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ADRF5700BCCZN-R7 数据表(HTML) 4 Page - Analog Devices |
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4 / 16 page ![]() Data Sheet ADRF5700 SPECIFICATIONS analog.com Rev. 0 | 4 of 16 Table 1. Electrical Specifications (Continued) Parameter Test Conditions/Comments Min Typ Max Unit SUPPLY CURRENT Positive Supply Current (IDD) Bias Low LE, D2, D3, D4, D5, and D6 = 0 V 350 µA Bias High LE, D2, D3, D4, D5, and D6 = 3.3 V 150 µA Negative Supply Current (ISS) –520 μA RECOMMENDED OPERATING CONDITIONS Supply Voltage Positive (VDD) 3.15 3.45 V Negative (VSS) −3.45 −3.15 V Digital Control Voltage 0 VDD V RF Power Handling2, 3 Frequency = 100 MHz to 20 GHz, TCASE = 85°C, all attenuation states Input at ATTIN or ATTOUT Steady state, average 24 dBm Steady state, peak 30 dBm Hot switching, average 24 dBm Hot switching, peak 27 dBm Case Temperature TCASE −40 +105 °C 1 For input linearity performance over wide frequency range, see Figure 21 and Figure 22. 2 For power derating over frequency, see Figure 2 and Figure 3. Applicable for all ATTIN and ATTOUT power specifications. 3 For 105°C operation, the power handling degrades from the TCASE = 85°C specifications by 3 dB. |
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