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APTM100A13SCG 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 APTM100A13SCG
功能描述  SiC diodes MOSFET Power Module
PDF  6 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

APTM100A13SCG 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  APTM100A13SCG Datasheet HTML 1Page - Inchange Semiconductor Company Limited APTM100A13SCG Datasheet HTML 2Page - Inchange Semiconductor Company Limited APTM100A13SCG Datasheet HTML 3Page - Inchange Semiconductor Company Limited APTM100A13SCG Datasheet HTML 4Page - Inchange Semiconductor Company Limited APTM100A13SCG Datasheet HTML 5Page - Inchange Semiconductor Company Limited APTM100A13SCG Datasheet HTML 6Page - Inchange Semiconductor Company Limited  
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ISCFM8017
eq APTM100A13SCG
SiC diodes MOSFET Power Module
www.iscsemi.com
2
MOSFET ChaRACTERISTICS (TC =25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 6mA
3.0
--
5.0
V
RDS(on)
Drain-Source On-stage Resistance VGS= 10V; ID= 32.5A
--
130
156
mΩ
IGSS
Gate Source Leakage Current
VGS= ±30V; VDS= 0V
--
--
±
450
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 1000V, VGS = 0V,Tj= 25℃
--
--
600
uA
VDS = 800V, VGS = 0V,Tj= 125℃
--
--
2
mA
Ciss
Input Capacitance
VGS = 0V,
VDS = 25V,
f = 1MHz
--
15.6
--
nF
Coss
Output Capacitance
--
2.6
--
Crss
Reverse Transfer Capacitance
--
0.43
--
Qg
Total Gate Charge
VGS = 10V,
VBus= 500V,
ID=65A
--
570
--
nC
Qgs
Gate-Source Charge
--
75
--
Qgd
Gate-Drain Charge
--
363
--
Eon
Turn-On Switching Energy
TJ=25°C,
VGS= 15V, ID= 65A,
VBus= 667V, Rg= 0.5Ω
--
1280
--
uJ
Eoff
Turn-Off Switching Energy
--
463
--
Eon
Turn-On Switching Energy
TJ=25°C,
VGS= 15V, ID= 65A,
VBus= 667V, Rg= 0.5Ω
--
2673
--
uJ
Eoff
Turn-Off Switching Energy
--
571
--
RthJC
Junction to Case Thermal Resistance
--
--
0.1
℃
/W



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