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APTM100A13SCG 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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APTM100A13SCG 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 6 page ![]() ISCFM8017 eq APTM100A13SCG SiC diodes MOSFET Power Module www.iscsemi.com 1 FEATURES · VDSS =1000V,RDS(on)= 130mΩ(typ)@Tj=25℃ · Kelvin source for easy drive · Very low stray inductance · High level of integration APPLICATIONS · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies Absolute Maximum Ratings(TC=25℃ unless otherwise specified) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Breakdown Voltage 1000 V VGS Gate-Source Voltage ± 30 V ID Continuous Drain Current Tc= 25℃ Tc= 80℃ 65 A 49 A IDM Maximum Pulsed Drain-Source Current 240 A TJ Operating Junction Temperature -40~150 ℃ TSTG Storage Temperature Range -40~125 ℃ PD Maximum power dissipation 1250 W |
类似零件编号 - APTM100A13SCG |
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类似说明 - APTM100A13SCG |
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