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APTM100A13SCG 数据表(PDF) 3 Page - Inchange Semiconductor Company Limited

部件名 APTM100A13SCG
功能描述  SiC diodes MOSFET Power Module
PDF  6 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

APTM100A13SCG 数据表(HTML) 3 Page - Inchange Semiconductor Company Limited

  APTM100A13SCG Datasheet HTML 1Page - Inchange Semiconductor Company Limited APTM100A13SCG Datasheet HTML 2Page - Inchange Semiconductor Company Limited APTM100A13SCG Datasheet HTML 3Page - Inchange Semiconductor Company Limited APTM100A13SCG Datasheet HTML 4Page - Inchange Semiconductor Company Limited APTM100A13SCG Datasheet HTML 5Page - Inchange Semiconductor Company Limited APTM100A13SCG Datasheet HTML 6Page - Inchange Semiconductor Company Limited  
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ISCFM8017
eq APTM100A13SCG
SiC diodes MOSFET Power Module
www.iscsemi.com
3
Series Diode Characteristics (TC =25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VRRM
Maximum Repetitive Reverse Voltage
1000
--
--
V
VF
Diode Forward Voltage
IF= 120A
--
1.9
2.5
V
IF= 240A
--
2.2
--
IF= 120A;TJ=150°C
--
1.7
--
trr
Reverse Recovery Time
ISD = 120 A, VR = 667V,
di/dt=400A/us
--
282
--
ns
Qrr
Reverse Recovery Charge
--
1521
--
nC
IF
DC Forward Current
TC=100℃
--
120
--
A
IRM
Maximum Reverse Leakage
Current
VR=1000V
--
--
350
uA
RthJC
Junction to Case Thermal Resistance
--
--
0.46
℃
/W
SiC Diode Characteristics (TC =25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VRRM
Maximum Repetitive Reverse Voltage
1200
--
--
V
VF
Diode Forward Voltage
IF= 40A
--
1.6
1.8
V
IF= 40A;TJ=175°C
--
2.6
3.0
QC
Total Capacitive Charge
IF = 40 A, VR = 600V,
di/dt= 2000A/us
--
113
--
nC
Q
otal Capacitance
f = 1MHz, VR = 200V
--
361
--
pF
f = 1MHz, VR = 400V
265
IF
Diode Forward Current
IF=40A,TC=125℃
--
40
--
A
IRM
Maximum Reverse Leakage
Current
VR=1200V,Tj= 25℃
VR=1200V,Tj= 125℃
--
400
1600
uA
800
8000
RthJC
Junction to Case Thermal Resistance
--
--
0.35
℃
/W



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