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ISCF8012 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 ISCF8012
功能描述  SiC N-Channel MOSFET
PDF  4 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISCF8012 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCF8012 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8012 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8012 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISCF8012 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISCF8012
eq NTH4L028N170M1
SiC N-Channel MOSFET
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.28
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 1mA
1700
--
--
V
VGS(th)
Gate Threshold Voltage
VDS = 10V, ID = 20mA
1.8
2.75
4.3
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 20V; ID=60A
--
20
40
mΩ
RDS(ON)
Drain-Source On-stage Resistance
VGS= 20V; ID=60A
TJ=175℃
--
57
--
mΩ
IGSS
Gate Source Leakage Current
VGS= -15/+25V; VDS= 0V
--
--
±
1
μA
IDSS
Zero Gate Voltage Drain Current
VDS = 1700V; VGS = 0V
--
--
100
μA
IDSS
Zero Gate Voltage Drain Current
VDS = 1700V; VGS = 0V
TJ=175℃
--
--
1
mA
RG
Gate−Resistance
f = 1.0MHz
--
3.5
--
Ω
Ciss
Input Capacitance
VGS = 0V,
VDS = 1000V,
f = 1.0MHz
--
5070
--
pF
Coss
Output Capacitance
--
240
--
Crss
Reverse Transfer Capacitance
--
50
--
Qg
Total Gate Charge
VDD=1200V,
ID= 50A,
VGS= -5to +20V
--
185
--
nC
Qgs
Gate-Source Charge
--
45
--
Qgd
Gate-Drain Charge
--
55
--
td(on)
Turn-on Delay Time
VGS= - 1.5to +20V
ID= 50A,
VDS=1200V,
Rg=15Ω,
L=250uH
--
18
--
ns
tr
Turn-on Rise Time
--
64
--
td(off)
Turn-off Delay Time
--
210
--
tf
Turn-off Fall Time
--
84
--



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