ISCF8012 datasheet(3/4 Pages) ISC

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ISCF8012 数据表(PDF) 3 Page - Inchange Semiconductor Company Limited

部件名	ISCF8012

功能描述	SiC N-Channel MOSFET

PDF	4 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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ISCF8012 数据表(HTML) 3 Page - Inchange Semiconductor Company Limited

ISCF8012 Datasheet HTML 1Page - Inchange Semiconductor Company Limited

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ISCF8012 Datasheet HTML 4Page - Inchange Semiconductor Company Limited

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ISCF8012

eq NTH4L028N170M1

SiC N-Channel MOSFET

www.iscsemi.com

EON

Turn-On Switching Energy

VGS= - 1.5to +20V

ID= 50A,

VDS=1200V,

Rg=15Ω,

5.33

EOFF

Turn-Off Switching Energy

4.07

SOURCE-DRAIN BODY DIODE CHARACTERISTICS

Drain - Source Body Diode Characteristics

VSD

Diode Forward Voltage

ISD= 60A; VGS= -5V

4.3

trr

Reverse Recovery Time

VGS = -5V, ISD = 50A,

dif/dt=1053 A/µs,

Qrr

Reverse Recovery Charge

915

Package Dimensions (UNIT: MM):

TO-247-4

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