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ISCF8012 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF8012 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page  ISCF8012 eq NTH4L028N170M1 SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · High Blocking Voltage with Low On-Resistance · RDS(ON)= 40mΩ（TYP.）@VGS=20V Tj=25℃ · High Speed Switching with Low Capacitance · Easy to Parallel and Simple to Drive APPLICATIONS · Solar Inverters · Switch Mode Power Supplies · DC-DC Converters · Motor drives Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1700 V VGSS Gate-Source Opetation Voltage -15/+25 V ID Drain Current-Continuous 81 A Drain Current-Continuous@Tc=100℃ 57 A IDM Drain Current-Single Pluse 363 A PD Total Dissipation @TC=25℃ 535 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ |
类似零件编号 - ISCF8012 |
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类似说明 - ISCF8012 |
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