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AM29F080B 数据表(PDF) 33 Page - Advanced Micro Devices |
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AM29F080B 数据表(HTML) 33 Page - Advanced Micro Devices |
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33 / 39 page ![]() November 1, 2006 21503G5 Am29F080B 31 D A TA SH EE T AC CHARACTERISTICS Erase and Program Operations Alternate CE# Controlled Writes Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. Parameter Symbol Parameter Description Speed Option s Unit JEDEC Std. -55 -70 -90 -120 tAVAV tWC Write Cycle Time (Note 1) Min 55 70 90 120 ns tAVEL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 45454550 ns tDVEH tDS Data Setup Time Min 25304550 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recover Time Before Write Min 0 ns tWLEL tWS CE# Setup Time Min 0 ns tEHWH tWH CE# Hold Time Min 0 ns tELEH tCP Write Pulse Width Min 30 35 45 50 ns tEHEL tCPH Write Pulse Width High Min 20 ns tWHWH1 tWHWH1 Byte Programming Operation (Note 2) Typ 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 1 sec |
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