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AM29F080B 数据表(PDF) 38 Page - Advanced Micro Devices

部件名 AM29F080B
功能描述  8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
PDF  39 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29F080B 数据表(HTML) 38 Page - Advanced Micro Devices

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Am29F080B
21503G5 November 1, 2006
D A TA SH EE T
REVISION SUMMARY
Revision A (July 1997)
Initial release.
Revision B (January 1998)
Global
Formatted for consistency with other 5.0 volt-only
data sheets.
Figure 9, Read Operation Timings
Corrected RESET# waveform so that it is high for the
duration of the read cycle.
Figure 11, Chip/Sector Erase Operation Timings
Corrected data unlock cycle in diagram to 55h.
Figure 17, Alternate CE# Controlled Program
Operation Timings
Corrected command for sector erase to 30h, chip erase
to 10h.
Revision C (January 1998)
Standby Mode
Removed sentence in first paragraph referring to
RESET# pulse.
Sector Group Protection/Unprotection, Temporary
Sector Group Unprotect
Changed references from “sector” to “sector group”.
Corrected text to indicate sector groups are composed
of two adjacent sectors.
Revision D (May 1998)
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
DC Characteristics, CMOS Compatible
For ICC3 and ICC4, the voltage tolerances given for CE#
and RESET# are now ±0.5 V.
AC Characteristics
Erase/Program Operations; Erase and Program Oper-
ations Alternate CE# Controlled Writes: Corrected the
notes reference for tWHWH1 and tWHWH2. These param-
eters are 100% tested. Corrected the note reference for
tVCS. This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for tVIDR. This parameter is not
100% tested.
Command Definitions
Corrected the shift in the table header.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision E (January 1999)
Global
Updated for CS39S process technology.
Distinctive Characteristics
Added:
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
DC Characteristics—CMOS Compatible
Added note “For CMOS mode only, ICC3 = ICC4 = 20 µA
max at extended temperatures (> +85°C)”.
DC Characteristics—TTL/NMOS Compatible and
CMOS Compatible
ICC1, ICC2, ICC3, ICC4: Added Note 2 “Maximum ICC
specifications are tested with VCC = VCCmax”.
ICC3, ICC4: Deleted VCC = VCCMax.
Revision E+1 (March 23, 1999)
Operating Ranges
The temperature ranges are now specified as ambient.
Revision E+2 (April 9, 1999)
Ordering Information, Operating Ranges
Added the extended temperature range.
Revision F (November 15, 1999)
AC Characteristics—Figure 11. Program
Operations Timing and Figure 12. Chip/Sector
Erase Operations
Deleted tGHWL and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision F+1 (May 18, 2000)
DC Characteristics
TTL/NMOS Compatible: The ICC2 specifications are
now identical to those for CMOS compatible.
Revision G (December 4, 2000)
Added table of contents.
Ordering Information
Deleted burn-in option.



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