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AM29DL800B 数据表(PDF) 39 Page - Advanced Micro Devices |
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AM29DL800B 数据表(HTML) 39 Page - Advanced Micro Devices |
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39 / 46 page ![]() December 4, 2006 21519C4 Am29DL800B 37 D A TA SH EE T AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter 70 90 120 JEDEC Std Description Unit tAVAV tWC Write Cycle Time (Note 1) Min 70 90 120 ns tAVWL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 45 45 50 ns tDVEH tDS Data Setup Time Min 35 45 50 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE# Pulse Width Min 35 35 50 ns tEHEL tCPH CE# Pulse Width High Min 30 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Byte Typ 9 µs Word Typ 11 tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.7 sec |
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