AM29SL160C datasheet(34/52 Pages) AMD

34 / 52 page

Am29SL160C

21635C5 January 23, 2007

D A TA

SH EE T

DC CHARACTERISTICS

CMOS Compatible

Notes:

1. The ICC current listed is typically less than 1 mA/MHz, with OE# at VIL. Typical VCC is 2.0 V.

2. The maximum ICC specifications are tested with VCC = VCCmax.

3. ICC active while Embedded Erase or Embedded Program is in progress.

4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 50 ns.

5. Not 100% tested.

Parameter

Description

Test Conditions

Min

Typ

Max

Unit

Input Load Current

IN = VSS to VCC,

VCC = VCC max

±1.0

µA

ILIT

A9 Input Load Current

VCC = VCC max; A9 = 11.0 V

µA

ILO

Output Leakage Current

VOUT = VSS to VCC,

CC = VCC max

±1.0

µA

CC1

VCC Active Read Current

(Notes 1, 2)

CE# = VIL, OE# = VIH,

Byte Mode

5 MHz

1 MHz

CE# = VIL, OE# = VIH,

Word Mode

5 MHz

1 MHz

ICC2

CC Active Write Current

(Notes 2, 3, 5)

CE# = VIL, OE# = VIH

ICC3

VCC Standby Current (Note 2)

CE#, RESET# = VCC±0.2 V

µA

ICC4

VCC Reset Current (Note 2)

RESET# = VSS ± 0.2 V

µA

CC5

Automatic Sleep Mode

(Notes 2, 3)

VIH = VCC ± 0.2 V;

VIL = VSS ± 0.2 V

µA

VIL

Input Low Voltage

–0.5

0.2 x VCC

VIH

Input High Voltage

0.8 x VCC

VCC + 0.3

Voltage for WP#/ACC Sector

Protect/Unprotect and Program

Acceleration

8.5

9.5

Voltage for Autoselect and

Temporary Sector Unprotect

CC = 2.0 V

9.0

11.0

Output Low Voltage

OL = 100 μA, VCC = VCC min

0.1

Output High Voltage

OH = –100 μA, VCC = VCC min

CC–0.1

VLKO

Low V

CC Lock-Out Voltage

(Note 4)

1.2

1.5

AM29SL160C 数据表(PDF) 34 Page - Advanced Micro Devices

AM29SL160C 数据表(HTML) 34 Page - Advanced Micro Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52

数据表下载