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AM29BL162C 数据表(PDF) 21 Page - Advanced Micro Devices

部件名 AM29BL162C
功能描述  16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
PDF  52 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29BL162C 数据表(HTML) 21 Page - Advanced Micro Devices

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January 22, 2007 22142F9
Am29BL162C
17
D A TA
SH EET
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Table 8 defines the valid register command
sequences. Writing incorrect address and data val-
ues or writing them in the improper sequence resets
the device to reading array data.
All addresses are latched on the falling edge of
WE# or CE#, whichever happens later. All data is
latched on the rising edge of WE# or CE#, whichever
happens first. Refer to the appropriate timing diagrams
in the AC Characteristics section.
Reading Array Data in Non-burst Mode
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Em-
bedded Erase algorithm.
After the device accepts an Erase Suspend com-
mand, the device enters the Erase Suspend mode.
The system can read array data using the standard
read timings, except that if it reads at an address
within erase-suspended sectors, the device outputs
status data. After completing a programming opera-
tion in the Erase Suspend mode, the system may
once again read array data with the same exception.
See “Erase Suspend/Erase Resume Commands” for
more information on this mode.
The system must issue the reset command to re-en-
able the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the “Reset Com-
mand” section, next.
See also “Requirements for Reading Array Data Array in
Asynchronous (Non-Burst) Mode” in the “Key to Switch-
ing Waveforms” section for more information. The Read
Operations table provides the read parameters, and
Figure 15 shows the timing diagram.
Reading Array Data in Burst Mode
The device powers up in the non-burst mode. To read
array data in burst mode, the system must write the
four-cycle Burst Mode Enable command sequence
(see Table 8). The device then enters burst mode. In
addition to asserting CE#, OE#, and WE# control sig-
nals, burst mode operation requires that the system
provide appropriate LBA#, BAA#, and CLK signals. For
successful burst mode reads, the following events must
occur (refer to Figures 3 and 4 for this discussion):
1. The system asserts LBA# low, indicating to the de-
vice that a valid initial burst address is available on
the address bus. LBA# must be kept low until at
least the next rising edge of the CLK signal, upon
which the device loads the initial burst address.
2. The system returns LBA# to a logic high. The device
requires that the next rising edge of CLK occur with
LBA# high for proper burst mode operation. Typi-
cally, the initial number of CLK cycles depends on
the clock frequency and the rated speed of the de-
vice.
3. After the initial data has been read, the system as-
serts BAA# low to indicate it is ready to read the re-
maining burst read cycles. Each successive rising
edge of the CLK signal then causes the flash device
to increment the burst address and output sequen-
tial burst data.
4. When the device outputs the last word of data in the
32-word burst mode read sequence, the device out-
puts a logic low on the IND# pin. This indicates to
the system that the burst mode read sequence is
complete.
5. To exit the burst mode, the system must write the
four-cycle Burst Mode Disable command sequence.
The device also exits the burst mode if powered
down or if RESET# is asserted. The device does not
exit the burst mode if the reset command is written.



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