AM29BL162C datasheet(51/52 Pages) AMD

51 / 52 page

January 22, 2007 22142F9

Am29BL162C

D A TA

SH EET

Revision F (June 20, 2000)

Global

The “preliminary” designation has been removed from

the document. Parameters are now stable, and only

speed, package, and temperature range combinations

are expected to change in future data sheet revisions.

Distinctive Characteristics

Changed burst access time specification for the 65R

speed option in the industrial temperature range from

19 to 18 ns.

Product Selector Guide

Replaced tOE with tBACC to more clearly distinguish

burst mode access from asynchronous access times.

Note however, that in burst mode, tOE and tBACC spec-

ifications are identical. Changed tBACC for the 65R

speed option in the industrial temperature range from

19 to 18 ns.

Ordering Information

Burn-in processing is no longer available.

Requirements for Reading Array Data Array in

Asynchronous (Non-Burst) Mode

Clarified the description of how to terminate a burst

mode read operation.

Burst Mode Read with 40 MHz CLK figure

Changed tBACC for the 65R speed option in the indus-

trial temperature range from 19 to 18 ns.

Read Operations table

Changed tOE and tDF for the 65R speed option in the

industrial temperature range from 19 to 18 ns.

Burst Mode Read table

Changed tOE and tBACC for the 65R speed option in the

industrial temperature range from 19 to 18 ns.

Burst Mode Read figure

Corrected BAA# waveform to return high before the

final clock cycle shown.

Erase and Programming Performance table, Erase

and Program Operations table, Alternate CE#

Controlled Erase and Program Operations table

Resolved differences in typical sector erase times. The

typical sector erase time for all sectors is 3 sec.

Revision F+1 (November 21, 2000)

Added table of contents. Added Figure 1, In-System

Sector Protect/Unprotect Algorithms figure to docu-

ment (was missing from previous revisions).

Revision F+2 (July 22, 2002)

Pin Description, IND# End of Burst Indicator

Clarified description of IND# function.

Table 1, Device Bus Operations

In burst read operations section, changed BAA# to “H”

for “Load star ting Burst Address” and Terminate

Current Burst Read Cycle; Start New Burst Read

Cycle.”

Requirements for Reading Array Data in

Synchronous (Burst) Mode

Modified section to clarify the description of the IND#

and burst read functions.

Burst Sequence Table

Deleted table.

Absolute Maximum Ratings

Modified maximum DC voltage and maximum positive

overshoot in Note 1 to refer to input and I/O pins.

Revision F+3 (August 19, 2002)

Product Selector Guide

Added Note #2.

Revision F+4 (September 12, 2002)

Product Selector Guide

Removed Note #2.

Revision F+5 (November 22, 2002)

Distinctive Characteristics

Changed endurance to 1 million cycles.

Erase Suspend/Erase Resume Command

Sequence

Noted that only asynchronous reads are allowed during

the erase suspend mode.

Erase/Program Operations table, Alternate CE#

Controlled Erase/Program Operations table

Changed typical sector erase time from 3 s to 1 s.

Erase and Programming Performance

Changed typical/maximum sector erase time from 3

s/60 s to 1 s/15 s, respectively. Changed typical chip

erase time from 40 s to 15 s. Changed endurance to 1

million cycles. Added Asynchronous mode and Burst

mode sections.

Revision F+6 (June 10, 2004)

Ordering Information

Changed temperature range from -55°C to -40°C.

Revision F+7 (October 29, 2004)

Ordering Information

Added:

F= Industrial –40°C to +°85C) for Pb-free Package

K= Extended –55°C to +125°C) for Pb-free Package

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