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M41000000G 数据表(PDF) 39 Page - Advanced Micro Devices

部件名 M41000000G
功能描述  64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
PDF  63 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

M41000000G 数据表(HTML) 39 Page - Advanced Micro Devices

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38
Am41DL6408G
August 19, 2002
P R E L I M INARY
DC CHARACTERISTICS
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN = VSS to VCC
–1.0
1.0
µA
I
LO
Output Leakage Current
CE1#s = VIH, CE2s = VIL or OE# =
V
IH or WE# = VIL, VIO= VSS to VCC
–1.0
1.0
µA
ICC
Operating Power Supply Current
I
IO = 0 mA, CE1#s = VIL, CE2s =
WE# = V
IH, VIN = VIH or VIL
3mA
I
CC1s
Average Operating Current
Cycle time = 1 µs, 100% duty,
IIO = 0 mA, CE1#s ≤ 0.2 V,
CE2
≥ V
CC – 0.2 V, VIN ≤ 0.2 V or
V
IN ≥ VCC – 0.2 V
3mA
I
CC2s
Average Operating Current
Cycle time = Min., I
IO = 0 mA,
100% duty, CE1#s = V
IL, CE2s =
V
IH, VIN = VIL = or VIH
30
mA
V
OL
Output Low Voltage
I
OL = 2.1 mA
0.4
V
V
OH
Output High Voltage
I
OH = –1.0 mA
2.4
V
I
SB
Standby Current (TTL)
CE1#s = V
IH, CE2 = VIL, Other
inputs = V
IH or VIL
0.3
mA
I
SB1
Standby Current (CMOS)
CE1#s
≥ V
CC – 0.2 V, CE2 ≥ VCC –
0.2 V (CE1#s controlled) or CE2
≤
0.2 V (CE2s controlled), CIOs =
V
SS or VCC, Other input = 0 ~ VCC
15
µA



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