M41000000G datasheet(63/63 Pages) AMD

63 / 63 page

Am41DL6408G

August 19, 2002

P R E L I M INARY

REVISION SUMMARY

Revision A (October 24, 2001)

Initial release.

Revision A+1 (November 26, 2001)

Global

The abbreviation for Sector Address has been

changed from SA to SADD.

Connection Diagrams

Changed ball E4 to “Shared” coloring.

Tables 1–4, Device Bus Operations

Added Table 4. Changed formatting and specifications

to be consistent with other AMD flash memory mu-

lit-chip offerings.

Table 6, Bank Address

Added table.

Table 13, Primary Vendor-Specific Extended Query

Modified descriptions for addresses 4Ah, 4Fh. Deleted

note.

Table 14, Am29DL640G Command Definitions

Corrected descriptions for SADD and BA in legend.

Clarified Note 5.

DC Characteristics table

Changed minimum specification for V

ID.

Flash Read-Only Operations table

Changes maximum t

OE for 85 ns SRAM.

Erase and Program Operations table, Alternate

CE#f Controlled Erase and Program Operations

table

Changed t

AH specification for both 70 and 85 ns.

Changed t

DS for 70 ns, tWHWH1, tWHWH2, and tBUSY.

Flash Erase And Programming Performance table

Changed typical and maximum specifications for sec-

tor erase time. Changed typical specification of chip

erase.

Revision B (August 19, 2002)

Global

Added 55 ns SRAM speed grade.

MCP Block Diagram

Removed A-1 from DQ15/A-1 input to Flash Memory

and SRAM

Trademarks

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

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