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AM29PDL127H 数据表(PDF) 68 Page - Advanced Micro Devices

部件名 AM29PDL127H
功能描述  128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control
PDF  68 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29PDL127H 数据表(HTML) 68 Page - Advanced Micro Devices

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Am29PDL127H
June 07, 2005
P RE L I M I NARY
Distinctive Characteristics
Performance Characteristics:
Under Power Consump-
tion bullet, changed active read current from 55 to 45
mA; changed program/erase current from 25 to 18
mA.
DC Characteristics
Changed IOL test conditions for VOL from 4.0 mA to 2.0
mA.
Table 16, Test Specifications
Changed CL from 70 pF to 30 pF. Added note for 70 pF
load capacitance.
AC Characteristics
Read-only Operations table:
Added note for 70 pF
load capacitance.
SecSi
TM (Secured Silicon) Sector Flash Memory
Region
Customer-Lockable Area: Added sector protection fig-
ure and changed figure reference in this section from
Figure 1 to Figure 3.
Table 16. Sector Protection Command Definitions
Corrected number of cycles for SecSi Protection Bit
Status, PPMLB Status, and SPMLB Status from 4 to 5
cycles. For these command sequences, inserted a
cycle before the final read cycle (RD0).
Revision A+6 (June 7, 2005)
Coverpage and Title page
Updated EOL disclaimers.
Added notation to superseding documents.
Trademarks
Copyright © 2005 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.



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