PBYR2150CT datasheet(4/5 Pages) PHILIPS

部件名	PBYR2150CT

功能描述	Schottky barrier double diode

PDF	5 Pages

Scroll/Zoom	100%

制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

4 / 5 page

1996 Oct 14

Philips Semiconductors

Preliminary speciﬁcation

Schottky barrier double diode

PBYR2150CT

GRAPHICAL DATA

(1) Tamb =25 °C.

(2) Tamb =60 °C.

(3) Tamb =80 °C.

(4) Tamb = 100 °C.

Fig.2

Forward current as a function of forward

voltage; typical values.

handbook, halfpage

0.8

0.2

0.4

0.6

VF (V)

(A)

10−1

10−2

10−3

10−4

10−5

10−6

MGD766

(4)

(3)

(2)

(1)

(1) Tamb =25 °C.

(2) Tamb =60 °C.

(3) Tamb =80 °C.

(4) Tamb = 100 °C.

Fig.3

Reverse current as a function of reverse

voltage; typical values.

handbook, halfpage

150

100

10−2

10−3

10−4

10−5

10−6

MGD767

VR (V)

(A)

(4)

(3)

(2)

(1)

Fig.4

Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz.

handbook, halfpage

100

250

100

150

200

(pF)

VR (V)

MGD768

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