PBYR2150CT datasheet(3/5 Pages) PHILIPS

3 / 5 page

1996 Oct 14

Philips Semiconductors

Preliminary speciﬁcation

Schottky barrier double diode

PBYR2150CT

Notes

1. Refer to SOT223 standard mounting conditions.

2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power

losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses

PR and IF(AV) rating will be available on request.

ELECTRICAL CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulsed test: tp = 300 µs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOT223 standard mounting conditions.

Tstg

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

Tamb

operating ambient temperature

−

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

forward voltage

see Fig.2

IF = 0.1 A; note 1

400

IF = 0.5 A; note 1

650

IF = 1 A; note 1

850

IF = 1 A; Tj = 100 °C; note 1

690

reverse current

VR =VRRMmax; note 1; see Fig.3

VR =VRRMmax; Tj = 100 °C; note 1;

see Fig.3

diode capacitance

VR = 4 V; f = 1 MHz; see Fig.4

100

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

PBYR2150CT 数据表(PDF) 3 Page - NXP Semiconductors

PBYR2150CT 数据表(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5

数据表下载

链接网址

PBYR2150CT 数据表(PDF) 3 Page - NXP Semiconductors

PBYR2150CT 数据表(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5

数据表 下载

链接网址

数据表下载