PBYR2150CT datasheet(2/5 Pages) PHILIPS

2 / 5 page

1996 Oct 14

Philips Semiconductors

Preliminary speciﬁcation

Schottky barrier double diode

PBYR2150CT

FEATURES

• Low switching losses

• Low forward voltage

• High breakdown voltage

• Fast recovery time

• Guard ring protected

• Plastic SMD package.

APPLICATIONS

• Low power, switched-mode

power supplies

• Rectification

• Polarity protection.

DESCRIPTION

The PBYR2150CT is a Schottky barrier double diode, fabricated in planar

technology, and encapsulated in a SOT223 plastic SMD package.

PINNING

DESCRIPTION

anode (a1)

common cathode

anode (a2)

common cathode

123

Top view

MAM086

Fig.1 Simplified outline (SOT223), pin configuration and symbol.

Marking code: BYR215.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

continuous reverse voltage

−

150

VRRM

repetitive peak reverse voltage

−

150

VRWM

crest working reverse voltage

−

150

IF(AV)

average forward current

Tamb =85 °C; Rth j-a = 70 K/W;

note 1; VR(equiv) = 0.2 V; note 2

−

IFSM

non-repetitive peak forward current t = 8.3 ms half sinewave;

JEDEC method

−

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