Page 8

ams Datasheet

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[v1-00] 2016-Mar-22

TSL2771 − Absolute Maximum R atings

Figure 8:

ALS Characteristics; VDD = 3 V, TA = 25ºC, Gain = 16, AEN = 1 (unless otherwise noted)

(1) (2) (3)

Note(s):

1. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 625 nm LEDs

and infrared 850 nm LEDs are used for final product testing for compatibility with high-volume production.

2. The 625 nm irradiance Ee is supplied by an AlInGaP light-emitting diode with the following typical characteristics: peak wavelength

λp = 625 nm and spectral halfwidth Δλ½ = 20 nm.

3. The 850 nm irradiance Ee is supplied by a GaAs light-emitting diode with the following typical characteristics: peak wavelength

λp = 850 nm and spectral halfwidth Δλ½ = 42 nm.

Parameter

Test Conditions

Channel

Min

Typ

Max

Unit

Dark ADC count value

Ee = 0, AGAIN = 120x,

ATIME = 0xDB (100 ms)

CH0

0

1

5

counts

CH1

0

1

5

ADC integration time step

size

ATIME = 0xFF

2.58

2.72

2.9

ms

ADC Number of integration

steps

1

256

steps

ADC counts per step

ATIME = 0xFF

0

1024

counts

ADC count value

ATIME = 0xC0

0

65535

counts

ADC count value

λp = 625 nm,

Ee = 171.6 μW/cm

2,

ATIME = 0xF6 (27 ms) (2)

CH0

4000

5000

6000

counts

CH1

790

λp = 850 nm,

Ee = 219.7 μW/cm

2

ATIME = 0xF6 (27 ms) (3)

CH0

4000

5000

6000

CH1

2800

ADC count value ratio:

CH1/CH0

λp = 625 nm, ATIME 0xF6 (27 ms) (2)

10.8

15.8

20.8

%

λp = 850 nm, ATIME 0xF6 (27 ms) (3)

41

56

68

Re

Irradiance responsivity

λp = 625 nm,

ATIME = 0xF6 (27 ms) (2)

CH0

29.1

counts/

(

μW/cm2)

CH1

4.6

λp = 850 nm,

ATIME = 0xF6 (27 ms) (3)

CH0

22.8

CH1

12.7

Gain scaling, relative to 1x

gain setting

8x

−10

10

%

16x

−10

10

120x

−10

10