2001 Sep 11

2

Philips Semiconductors

Preliminary specification

NPN/PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = 47 kΩ

PEMD13

FEATURES

• 300 mW total power dissipation

• Very small 1.6 × 1.2 mm ultra thin package

• Excellent coplanarity due to straight leads

• Replaces two SC-75/SC-89 packaged transistors on

same PCB area

• Reduces required PCB area

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

DESCRIPTION

NPN/PNP resistor-equipped transistors in a SOT666

plastic package.

MARKING

TYPE NUMBER

MARKING CODE

PEMD13

Z1

PINNING

PIN

SYMBOL

DESCRIPTION

1, 4

TR1; TR2

emitter

2, 5

TR1; TR2

base

6, 3

TR1; TR2

collector

handbook, halfpage

MAM448

12

3

4

6

5

Top view

65

4

12

3

R2

TR1

TR2

R1

R1

R2

Fig.1 Simplified outline (SOT666) and symbol.

MBK120

2, 5

6, 3

1, 4

Fig.2 Equivalent inverter symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MAX.

UNIT

collector-emitter voltage

50

V

peak collector current

100

mA

R1

bias resistor

4.7

k

Ω

R2

bias resistor

47

k

Ω