2001 Sep 11

3

Philips Semiconductors

Preliminary specification

NPN/PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2=47kΩ

PEMD13

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Notes

1. Transistor mounted on an FR4 printed-circuit board.

2. The only recommended soldering method is reflow soldering.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

collector-base voltage

open emitter

−

50

V

collector-emitter voltage

open base

−

50

V

emitter-base voltage

open collector

−

10

V

input voltage TR1

positive

−

+30

V

negative

−−5V

input voltage TR2

positive

−

+5

V

negative

−−30

V

output current (DC)

−

100

mA

peak collector current

−

100

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

Per device

total power dissipation

−

300

mW

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to

ambient

notes 1 and 2

416

K/W