PEMD13 datasheet(4/12 Pages) PHILIPS

部件名	PEMD13

功能描述	NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm

PDF	12 Pages

Scroll/Zoom	100%

制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

4 / 12 page

2001 Sep 11

Philips Semiconductors

Preliminary speciﬁcation

NPN/PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2=47kΩ

PEMD13

CHARACTERISTICS

Tamb =25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base cut-off current

VCB =50V; IE =0

−−

100

ICEO

collector-emitter cut-off current

VCE =50V; IB =0

−−

µA

VCE =30V; IB = 0; Tj = 150 °C

−−

µA

IEBO

emitter-base cut-off current

VEB =5V; IC =0

−−

170

µA

hFE

DC current gain

VCE =5V; IC =10mA

100

−−

VCEsat

collector-emitter saturation voltage

IC = 5 mA; IB = 0.25 mA

−−

100

Vi(off)

input off voltage

VCE =5V; IC = 100 µA

−

0.6

0.5

Vi(on)

input on voltage

VCE = 0.3 V; IC = 5 mA

1.3

0.9

−

input resistor

3.3

4.7

6.1

Ω

resistor ratio

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

TR1 (NPN)

−−

2.5

TR2 (PNP)

−−

3pF

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