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PMST2222A 数据表(PDF) 4 Page - NXP Semiconductors |
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PMST2222A 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page ![]() 1999 Apr 22 4 Philips Semiconductors Product specification NPN switching transistors PMST2222; PMST2222A Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. F noise figure IC = 200 µA; VCE =5V; RS =2kΩ; f = 1 kHz; B = 200 Hz − 4dB Switching times (between 10% and 90% levels); (see Fig.2) ton turn-on time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 35 ns td delay time − 15 ns tr rise time − 20 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Fig.2 Test circuit for switching times. Vi = 9.5 V; T = 500 µs; tp =10 µs; tr =tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope input impedance Zi =50 Ω. ndbook, full pagewidth RC R2 R1 DUT MLB826 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB Vi VCC |
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