1999 Apr 22

2

Philips Semiconductors

Product specification

NPN switching transistors

PMST2222; PMST2222A

FEATURES

• High current (max. 600 mA)

• Low voltage (max. 40 V).

APPLICATIONS

• High-speed switching and linear amplification.

DESCRIPTION

NPN switching transistor in a SOT323 plastic package.

PNP complement: PMST2907A.

MARKING

Note

1.

∗ = - : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE NUMBER

PMST2222

∗1B

PMST2222A

∗1P

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT323) and symbol.

handbook, halfpage

2

3

1

MAM062

3

2

1

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

PMST2222

−

60

V

PMST2222A

−

75

V

collector-emitter voltage

open base

PMST2222

−

30

V

PMST2222A

−

40

V

emitter-base voltage

open collector

PMST2222

−

5V

PMST2222A

−

6V

collector current (DC)

−

600

mA

peak collector current

−

800

mA

peak base current

−

200

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C