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PMST2222A 数据表(PDF) 3 Page - NXP Semiconductors |
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PMST2222A 数据表(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  1999 Apr 22 3 Philips Semiconductors Product specification NPN switching transistors PMST2222; PMST2222A THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 625 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =50V − 10 nA PMST2222 IE = 0; VCB =50V; Tj = 125 °C − 10 µA collector cut-off current IE = 0; VCB =60V − 10 nA PMST2222A IE = 0; VCB =60V; Tj = 125 °C − 10 µA IEBO collector cut-off current IC = 0; VEB =3V − 10 nA hFE DC current gain IC = 0.1 mA; VCE =10V 35 − IC = 1 mA; VCE =10V 50 − IC = 10 mA; VCE =10V 75 − IC = 10 mA; VCE =10V; Tamb = −55 °C35 − IC = 150 mA; VCE = 1 V; note 1 50 − IC = 150 mA; VCE = 10 V; note 1 100 300 DC current gain IC = 500 mA; VCE = 10 V; note 1 PMST2222 30 − PMST2222A 40 − VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 − 400 mV PMST2222 IC = 500 mA; IB = 50 mA; note 1 − 1.6 V collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 − 300 mV PMST2222A IC = 500 mA; IB = 50 mA; note 1 − 1V VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 − 1.3 V PMST2222 IC = 500 mA; IB = 50 mA; note 1 − 2.6 V base-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 0.6 1.2 V PMST2222A IC = 500 mA; IB = 50 mA; note 1 − 2V Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 8pF Ce emitter capacitance IC =ic = 0; VEB = 0.5 V; f = 1 MHz PMST2222 − 30 pF PMST2222A − 25 pF fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz PMST2222 250 − MHz PMST2222A 300 − MHz |
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