PVB42004X datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 Feb 19

Philips Semiconductors

Product speciﬁcation

NPN microwave power transistor

PVB42004X

THERMAL CHARACTERISTICS

Note

1. See “

Mounting recommendations in the General part of handbook SC15”.

CHARACTERISTICS

Tmb =25 °C unless otherwise speciﬁed

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Rth j-mb

thermal resistance from junction to mounting base

Tj =75 °C

6.5

K/W

Rth mb-h

thermal resistance from mounting-base to heatsink

Tj =75 °C; note 1

0.7

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CES

collector-emitter breakdown

voltage

IC = 30 mA; RBE =0

−−

ICBO

collector cut-off current

VCB = 24 V; IE =0

−−

IEBO

emitter cut-off current

VEB = 1.5 V; IC =0

−−

1.5

Ccb

collector-base capacitance

VCB = 24 V; VEB = 1.5 V;

IE =IC = 0; f = 1 MHz

−

Cce

collector-emitter capacitance

VCB = 24 V; VEB = 1.5 V;

IE =IC = 0; f = 1 MHz

−

1.2

−

Ceb

emitter-base capacitance

VCB = 24 V; VEB =1V;

IE =IC = 0; f = 1 MHz

−

Fig.3 Load power as a function of frequency.

VCC = 24 V; PS =1W.

handbook, halfpage

f (GHz)

(W)

MGD978

Fig.4

Power gain and efficiency as functions of

frequency.

VCC = 24 V; PS =1W.

handbook, halfpage

ηC

f (GHz)

ηC

(%)

(dB)

MGD979

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