1997 Feb 19

2

Philips Semiconductors

Product specification

NPN microwave power transistor

PVB42004X

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistors providing excellent

current sharing and withstanding a high VSWR

• Local thick oxide and gold sandwich metallization

realizes very stable characteristics and excellent lifetime

• Multicell geometry gives good balance of dissipated

power and low thermal resistance.

APPLICATIONS

• Intended for use in common base class-B power

amplifiers up to 4.2 GHz.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in

a 2-lead rectangular flange package with a ceramic cap

(SOT445A) with the common base connected to the

flange.

PINNING - SOT445A

PIN

DESCRIPTION

1

collector

2

emitter

3

base connected to flange

Fig.1 Simplified outline and symbol.

handbook, halfpage

1

2

MAM251

Top view

33

e

c

b

QUICK REFERENCE DATA

MODE OF

OPERATION

f

(GHz)

(V)

(W)

(dB)

(%)

(

Ω)

(

Ω)

Class-B (CW)

1

24

typ. 13

typ. 11

typ. 60

2.3 + j2.8

7.8 + j11.6

2

24

typ. 10

typ. 10

typ. 48

1.4 + j9.5

3.9 + j2.6

3

24

typ. 7.5

typ. 8.8

typ. 30

4.2 + j21

2.3

− j2.5

4

24

typ. 4

typ. 6

typ. 25

38

− j32

1.9

− j8.5

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.