1997 Feb 19

3

Philips Semiconductors

Product specification

NPN microwave power transistor

PVB42004X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

40

V

collector-emitter voltage

open base

−

15

V

collector-emitter voltage

40

V

emitter-base voltage

open collector

−

3V

collector current

−

1A

total power dissipation

−

18

W

storage temperature

−65

+200

°C

operating junction temperature

−

200

°C

soldering temperature

at 0.1 mm from the case;

t

≤ 10 s

−

235

°C

Fig.2

Power derating curves as functions of

mounting base temperature.

(1) VSWR

≥ 5.

(2) VSWR < 3.

handbook, halfpage

−50

200

25

0

(2)

(1)

5

10

15

20

0

50

100

150

MGD967

Ptot

(W)

Tmb (°C)