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PI0256HSN 数据表(PDF) 2 Page - AMI SEMICONDUCTOR

部件名 PI0256HSN
功能描述  25-關m-Pitch Wide Aperture Spectroscopic Photodiode Arrays
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  AMI [AMI SEMICONDUCTOR]
网页  http://www.amis.com
标志 AMI - AMI SEMICONDUCTOR

PI0256HSN 数据表(HTML) 2 Page - AMI SEMICONDUCTOR

  PI0256HSN Datasheet HTML 1Page - AMI SEMICONDUCTOR PI0256HSN Datasheet HTML 2Page - AMI SEMICONDUCTOR PI0256HSN Datasheet HTML 3Page - AMI SEMICONDUCTOR PI0256HSN Datasheet HTML 4Page - AMI SEMICONDUCTOR PI0256HSN Datasheet HTML 5Page - AMI SEMICONDUCTOR PI0256HSN Datasheet HTML 6Page - AMI SEMICONDUCTOR PI0256HSN Datasheet HTML 7Page - AMI SEMICONDUCTOR PI0256HSN Datasheet HTML 8Page - AMI SEMICONDUCTOR  
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PI0256HSN, PI0512HSN, PI1024HSN
Engineering Data Sheet
Page 2 of 8
March 13, 2002
Figure2. Geometry and layout of photodiode pixels.
During normal operation, the photons incident in or
near the NP photodiode junction generate free charges
that are collected and stored on the junction's depletion
capacitance. The number of collected charges is
proportional to the light exposure. Figure 3 shows the
stored signal charge as function of light exposure at a
wavelength of 575 nm. The exposure is the product of
the light intensity in nW/cm
2 and integration time in
seconds. The charge accumulates linearly until reach-
ing the saturation charge, and the corresponding
exposure is the saturation exposure.
There are two
saturation limits which are described in the Selectable
Charge Capacity section below.
The responsivity may be calculated as the saturation
charge divided by saturation exposure. The predicted
typical responsivity of a photodiode is 1.5
×10-4 C/J/cm2
at 575 nm. Figure 4 shows the predicted responsivity
of the photodiodes as a function of wavelength.
Figure 3. Stored signal charge as function of exposure at
a wavelength of 575 nm.
2 Dummy
Pixels
Active Pixels
25µm
2 Dummy
Pixels
2500µm
0
10
20
30
40
50
60
70
80
0
100
200
300
400
500
Exposure (nJ/cm
2)
saturation
w/o cap
saturation with cap



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