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ESDAXXSCX 数据表(PDF) 6 Page - STMicroelectronics |
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ESDAXXSCX 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 10 page ![]() ESDAxxSCx 6/10 To have a good approximation of the remaining voltages at both VI/O side, we provide the typical dynam- ical resistance value Rd. By taking into account the following hypothesis : Rg > Rd and Rload > Rd we have: we have: The results of the calculation done for Vg = 8 kV, Rg = 330 Ω (IEC61000-4-2 standard), VBR = 19 V (typ.) and Rd = 0.80 Ω (typ.) give: Vouput = 38.4 V This confirms the very low remaining voltage across the device to be protected. It is also important to note that in this approximation the parasitic inductance effect was not taken into account. This could be a few tenths of volts during a few nanoseconds at the output side. Figure 12: Ordering information scheme V output V BR R d + V g R g ------- × = ESDA 6V1 SC6 ESD Array Breakdown Voltage (min) Package 6V1 = 6.1 Volt SC5 = SOT23-5L SC6 = SOT23-6L |
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