MAT01

Data Sheet

VCB = 15 V, IC = 10 µA, −55°C ≤ TA ≤ +125°C, unless otherwise noted.

Table 2.

Parameter

Symbol

Test Conditions/Comments

MAT01AH

MAT01GH

Unit

Min

Typ

Max

Min

Typ

Min

OFFSET VOLTAGE/CURRENT

Offset Voltage

VOS

0.06

0.15

0.14

0.70

mV

Average Offset Voltage Drift1

TCVOS

0.15

0.50

0.35

1.8

µV/°C

Offset Current

IOS

0.9

8.0

1.5

15.0

nA

Average Offset Current Drift2

TCIOS

10

90

15

150

pA/°C

BIAS CURRENT

ΙΒ

28

60

36

130

nA

CURRENT GAIN

hFE

167

400

77

300

LEAKAGE CURRENT

Collector to Base Leakage Current

ICBO

TA = 125°C, VCB = 30 V, IE = 03

15

80

25

200

nA

Collector to Emitter Leakage Current

ICES

TA = 125°C, VCE = 30 V, VBE = 01, 3

50

300

90

400

nA

Collector to Collector Leakage Current

ICC

TA = 125°C, VCC = 30 V1

30

200

50

400

nA

1

Guaranteed by VOS test

(

)

for

BE

V

OS

V

T

OS

V

OS

TCV

<<

≅

, T = 298 K for TA = 25°C.

2

Guaranteed by IOS test limits over temperature.

3

The collector to base (ICBO) and collector to emitter (ICES) leakage currents can be reduced by a factor of 2 to 10 times by connecting the substrate (package) to a

potential that is lower than either collector voltage.

Rev. D | Page 4 of 12