Matched Monolithic

Dual Transistor

Data Sheet

MAT01

FEATURES

Low VOS (VBE match): 40 µV typical, 100 µV maximum

Low TCVOS: 0.5 µV/°C maximum

High hFE: 500 minimum

Excellent hFE linearity from 10 nA to 10 mA

Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz

High breakdown: 45 V min

APPLICATIONS

Weigh scales

Low noise, op amp, front end

Current mirror and current sink/source

Low noise instrumentation amplifiers

Voltage controlled attenuators

Log amplifiers

PIN CONNECTION DIAGRAM

Figure 1.

GENERAL DESCRIPTION

The MAT01 is a monolithic dual NPN transistor. An exclusive

silicon nitride triple passivation process provides excellent

stability of critical parameters over both temperature and time.

Matching characteristics include offset voltage of 40 µV,

temperature drift of 0.15 µV/°C, and hFE matching of 0.7%.

High hFE is provided over a six decade range of collector

current, including an exceptional hFE of 590 at a collector

current of only 10 nA. The high gain at low collector current

makes the MAT01 ideal for use in low power, low level input

stages.

C1

MAT01

TOP VIEW

(Not to Scale)

E1

B1

NOTES

1. SUBSTRATE IS CONNECTED TO CASE.

C2

E2

B2

1

3

6

4

2

5

Rev. D

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